Local bonding structures of SiO2 films on H-terminated Si(100) surfaces studied by using high-resolution electron energy loss spectroscopy

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 192-196

  Nakagawa, Y ^a   Higashi, M ^a   Ikeda, H ^a   Zaima, S ^a   Yasuda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; DESORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; MOLECULAR STRUCTURE; MONOLAYERS; OXIDATION; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SILICA; SURFACE PHENOMENA;

CENTRAL FORCE NETWORK MODEL;

SEMICONDUCTING FILMS;

EID: 0032094672     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00049-X     Document Type: Article

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