Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1090-1095

  Kalnitsky, A ^a,c   Hurley, P K ^b   Lepert, A ^a  

^a ORANGE LABS   (France)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c ELECTROCHEMICAL SOCIETY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; BORON; ELECTRIC CONTACTS; MOS DEVICES; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TITANIUM COMPOUNDS;

POLYSILICON; TITANIUM SILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031095290     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837537     Document Type: Article

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