Molecular-dynamics simulation of low-temperature growth of silicon films by cluster deposition

Modelling and Simulation in Materials Science and Engineering

Volumn 7, Issue 2, 1999, Pages 289-295

  Xie, J Q ^a   Feng, J Y ^a   Lu, H W ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LOW TEMPERATURE EFFECTS; MOLECULAR DYNAMICS; SILICON; THIN FILMS;

IONIZED CLUSTER BEAM (ICB);

FILM GROWTH;

EID: 0032640147     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/7/2/010     Document Type: Article

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