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Volumn 39, Issue 2, 1999, Pages 269-273

High electrical resistivity of CVD-diamond

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HEAT TREATMENT;

EID: 0032637957     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00225-X     Document Type: Article
Times cited : (16)

References (30)
  • 5
    • 0004856913 scopus 로고
    • Passive electronic applications
    • Seal M. Passive electronic applications. Diamond Rel Mater. 1:1992;1075-1081.
    • (1992) Diamond Rel Mater , vol.1 , pp. 1075-1081
    • Seal, M.1
  • 26
    • 0000292721 scopus 로고    scopus 로고
    • Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films
    • Hayashi K., Watanabe H., Yamanaka S. Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films. Diamond Rel Mater. 6:1997;303-307.
    • (1997) Diamond Rel Mater , vol.6 , pp. 303-307
    • Hayashi, K.1    Watanabe, H.2    Yamanaka, S.3
  • 27
    • 85031618512 scopus 로고    scopus 로고
    • The influence of hydrogen on the electronic characteristics of CVD diamond
    • Limburg University Centre, Diepenbeek, Belgium, 19-20 February
    • Jackman RB. The influence of hydrogen on the electronic characteristics of CVD diamond. In: Workshop on Surface and Defects in CVD Diamond Films III, Limburg University Centre, Diepenbeek, Belgium, 19-20 February, 1998.
    • (1998) In: Workshop on Surface and Defects in CVD Diamond Films , vol.3
    • Jackman, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.