Channel width dependence of hot-carrier induced degradation in shallow trench isolated pMOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1532-1536

  Ishimaru, Kazunari ^a,b   Chen, Jone F ^a,c   Hu, Chenming ^a,d  

^a IEEE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRENCH ISOLATION;

ELECTRON TRAPS; GATES (TRANSISTOR); HOT CARRIERS;

MOSFET DEVICES;

EID: 0032633883     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772507     Document Type: Article

References (13)

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