Avoidance of stiction in the release of highly boron doped micro-actuators fabricated using BESOI substrates

Microelectronics Reliability

Volumn 39, Issue 1, 1999, Pages 139-142

  Rosa, M A ^a   Dimitrijev, S ^a   Harrison, H B ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MICROMACHINING; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; STICTION;

WET ETCHING;

MICROACTUATORS;

EID: 0032631665     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00195-4     Document Type: Article

References (10)

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