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Volumn 249-251, Issue , 1998, Pages 775-779

Low-temperature conduction and giant negative magnetoresistance in III-V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs

(9) Oiwa, A a Katsumoto, S a Endo, A a Hirasawa, M a Iye, Y a Matsukura, F b Shen, A b Sugawara, Y b Ohno, H b

a UNIVERSITY OF TOKYO (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

Diluted magnetic semiconductors; Ferromagnetism; Giant negative magnetoresistance; Metal insulator transition

Indexed keywords

COMPOSITION EFFECTS; FERROMAGNETISM; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE; SEMICONDUCTING GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

INSULATOR METAL INSULATOR TRANSITION;

MAGNETIC SEMICONDUCTORS;

EID: 0032093576 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(98)00312-3 Document Type: Article

Times cited : (20)

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