Reduction of dichlorosiliane-based tungsten silicide resistivity by amorphization and its applicability as an electrode

Journal of the Electrochemical Society

Volumn 146, Issue 6, 1999, Pages 2261-2269

  Byun, Jeong Soo ^a,b   Lee, Byung Hak ^a   Park, Ji Soo ^a   Sohn, Dong Kyun ^a   Hong, Jeongeui ^a   Cho, Won Ju ^a   Choi, Sang Jun ^a   Kim, Jae Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; IONS; PARAFFINS; PHOSPHORUS; REDUCTION; SURFACES;

DICHLOROSILANE BASED TUNGSTEN SILICIDE; DOPANT DEPLETION; LINE RESISTANCE; LOW RESISTIVITY SILICIDE; THERMAL ACTIVATION;

TUNGSTEN COMPOUNDS;

EID: 0032631332     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391925     Document Type: Article

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