Effect of thermal annealing on the structural and electrical properties of HgTe/CdTe superlattices

Applied Surface Science

Volumn 148, Issue 1, 1999, Pages 105-110

  Han, M S ^a   Kang, T W ^b   Kim, T W ^c  

^a Semiconduct R and D Center   (South Korea)

^b Dongguk University   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; HALL EFFECT; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR GROWTH; X RAY ANALYSIS;

CADMIUM ZINC TELLURIDE; DOUBLE-CRYSTAL X RAY ROCKING CURVE (DCRV) ANALYSIS; MERCURY TELLURIDE; VAN DER PAUW HALL EFFECT MEASUREMENT;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032631269     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00121-X     Document Type: Article

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