Fabrication and properties of Mo contacts to amorphous cubic boron nitride (a-cBN) layers

Diamond and Related Materials

Volumn 5, Issue 9, 1996, Pages 1017-1020

  Werbowy, A ^a   Szmidt, J ^a   Sokolowska, A ^a   Olszyna, A ^a   Mitura, S ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Amorphous c BN; Electrical properties; Non rectifying Schottky Mo contacts; RPP method

Indexed keywords

EID: 0042138095     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00491-2     Document Type: Article

References (5)

1. J. Szmidt, A. Werbowy, A. Michalski, A. Olszyna, A. Sokolowska, S. Mitura, Diamond. Relat. Mater., 4 (1995)1131.
2. M. Sokolowski, A. Sokolowska, Z. Romanowski, B. Gokieli, M. Gajewska, J. Cryst. Growth, 52 (1981)165.
3. J. Szmidt, A. Werbowy, L. Jarzbowski, T. Gbicki, I. Petrakova, A. Sokolowska, A. Olszyna, J. Mat. Sci., to be published.
4. T. Brozek, A. Chojnacki, Proc. Int. AMSE Conf. on Signals and Systems, Warsaw, 1991, pp.35-46.
5. T. Brozek, J. Szmidt, A. Jakubowski, A. Olszyna, Diamond. Relat. Mater., 3 (1994)720.