High electric field phenomena in polycrystalline silicon thin-film transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3014, Issue , 1997, Pages 148-159

  Fortunato, Guglielmo ^a   Carluccio, R ^a   Colalongo, L ^b   Giovannini, S ^a   Mariucci, L ^a   Massussi, F ^a   Valdinoci, M ^b  

^a CNR   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Hot carrier effects; Impact ionization; Interface state density; Kink effect; Polycrystalline silicon; Thin film transistors

Indexed keywords

APPLICATIONS; CIVIL AVIATION; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; INTEGRATED CIRCUIT MANUFACTURE; IONIZATION; IONIZATION OF LIQUIDS; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; MICROELECTRONICS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

CIRCUIT APPLICATIONS; CIRCUIT DESIGNS; HIGH ELECTRIC FIELDS; HOT-CARRIER EFFECTS; INTERFACE STATE DENSITY; KINK-EFFECT; LARGE AREAS; POLYCRYSTALLINE SILICON; POLYCRYSTALLINE SILICON THIN FILM; POLYSILICON THIN FILM TRANSISTOR (TFT);

IMPACT IONIZATION;

EID: 6944256427     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.270290     Document Type: Conference Paper

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