Systematics of electrical conductivity across InP to GaAs wafer-fused interfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1111-1114

  Hammar, Mattias ^b   Wennekes, Frank ^a   Salomonsson, Fredrik ^a   Bentell, Jonas ^a   Streubel, Klaus ^b   Rapp, Stefan ^a   Keiper, Dietmar ^a   Westphalen, Ralf ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Mitel Semiconductor AB   (Sweden)

Author keywords

GaAs; Heterojunction; InP; Vertical cavity surface emitting lasers; Wafer fusion

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; ZINC;

CURRENT VOLTAGE MEASUREMENT; DOPING CONCENTRATION; IMPURITY CONCENTRATION; VERTICAL CAVITY SURFACE EMITTING LASERS; WAFER FUSION;

HETEROJUNCTIONS;

EID: 0032628281     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1111     Document Type: Article

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