Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 2, 1998, Pages 796-798

  Huq, S E ^a   Huanq, M ^b   Wilshaw, P R ^b   Prewett, P D ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; ION IMPLANTATION; PLASMA ETCHING; REACTIVE ION ETCHING; SILICA; SILICON WAFERS;

MICROFABRICATION; POLYSILICON FIELD EMITTER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032027162     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590219     Document Type: Article

References (5)

1. H. S. Uh, S. J. Kwon, and J. D. Lee, J. Vac. Sci. Technol. B 15, 472 (1997).
2. H. H. Busta, B. J. Zimmerman, J. E. Pogemiller, M. C. Tringides, and C. A. Spindt, J. Vac. Sci. Technol. B 11, 400 (1993).
3. S. E. Huq, L. Chen, and P. D. Prewett, Microelectron. Eng. 27, 95 (1995).
4. J. H. Thomas and B. Singh, J. Vac. Sci. Technol. A 10, 3039 (1992).
5. R. B. Marcus and T. T. Sheng, J. Electrochem. Soc. 6, 1278 (1982).