Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 193-195

  Seol, Kwang Soo ^a   Karasawa, Toshifumi ^a   Ohki, Yoshimichi ^a   Nishikawa, Hiroyuki ^b   Takiyama, Makoto ^c  

^a WASEDA UNIVERSITY   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; FILM GROWTH; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PHOTOLUMINESCENCE; PHOTONS; SILICA; BAND STRUCTURE;

PHOTOLUMINESCENCE INTENSITIES; THERMAL SILICA FILMS;

DIELECTRIC FILMS;

EID: 0031150238     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00046-4     Document Type: Article

References (5)

1. See, for example, W.L. Warren, E.H. Poindexter, M. Offenberg, and W. Muller-Warmuth, J. Electrochem. Soc. 139, 872 (1992).
2. H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, J. Appl. Phys. 78, 842 (1995).
3. K.S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, and M. Takiyama, in Proceedings of the 1995 International Symposium on Electrical Insulating Materials, Tokyo, Japan, p. 85.
4. K.S. Seol, Y. Ohki, H. Nishikawa, M. Takiyama, and Y. Hama, J. Appl. Phys. 80, 6444 (1996).
5. H. Hosono, and R. A. Weeks, Phys. Rev. B40, 10543 (1989).