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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1173-1177

Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells

(4) Feng, W a Chen, F a Huang, Q a Zhou, J M a

a INSTITUTE OF PHYSICS (China)

Author keywords

Molecular beam epitaxy; Multiple quantum wells; Photoluminescence

Indexed keywords

ANNEALING; CHARGE CARRIERS; INTERFACES (MATERIALS); ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031142757 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01041-X Document Type: Article

Times cited : (1)

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