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Volumn 86, Issue 2, 1999, Pages 782-790

Analysis of high-resolution X-ray diffraction in semiconductor strained layers

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTOMETERS; EPITAXIAL GROWTH; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

EID: 0032620974     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370805     Document Type: Article
Times cited : (6)

References (15)
  • 7
    • 85034197998 scopus 로고    scopus 로고
    • Bede Scientific Instruments Ltd, Double Crystal Control software
    • Bede Scientific Instruments Ltd, Double Crystal Control software.
  • 12
    • 85034166512 scopus 로고
    • private communication
    • P. Kidd, private communication (1990).
    • (1990)
    • Kidd, P.1
  • 15
    • 85034188125 scopus 로고
    • edited by M. R. Brozel and G. E. Stillman INSPEC, IEE, London, Chap. 1.2
    • J. C. Brice, in Properties of Gallium Arsenide, edited by M. R. Brozel and G. E. Stillman (INSPEC, IEE, London, 1966), Chap. 1.2.
    • (1966) Properties of Gallium Arsenide
    • Brice, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.