Critical thickness and relaxation of (111) oriented strained epitaxial layers

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 785-794

  Colson, H G ^a   Kidd, P ^a   Dunstan, D J ^a  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345653447     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00117-6     Document Type: Article

References (11)

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3. Hornstra, J. and Bartels, W.J. Determination of the lattice constant of epitaxial layers of III-V compounds. J. Cryst. Growth, 44 (1978) 518-525.
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7. Beanland, R. Multiplication of misfit dislocations in epitaxial layers. J. Appl. Phys., 72 (1992) 4031-4035.
8. Matthews, J.W. Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metals. Phil. Mag., 13 (1966) 1207-1221.
9. Willis, J.R., Jain, S.C. and Bullough, R. The energy of an array of dislocations: implications for strain relaxation in semiconductor heterostructures. Phil. Mag., A62 (1990) 115-129.
10. Anan, T., Nishi, K. and Sugou, S. Critical layer thickness on (111)B-oriented InGaAs/GaAs heteroepitaxy. Appl. Phys. Lett., 60 (1992) 3159-3161.
11. Calle, F., Sacedón, A., Alvarez, L., Calleja, E., Muoz, E., Colson, H.G. and Kidd, P. Optical characterization of [111]B InGaAs layers. Microelectronics J., 26 (1995) 821-826.