The dissolution behavior of the void defects by hydrogen annealing in Czochralski grown silicon crystals

Applied Physics Letters

Volumn 70, Issue 26, 1997, Pages 3525-3527

  Nakamura, K ^a   Saishoji, T ^a   Tomioka, J ^a  

^a Komatsu Electronic Metals Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001522234     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119221     Document Type: Article

References (26)

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