Atomic and electronic structures of Te adsorbed on GaAs(100) and InAs(100)

Surface Science

Volumn 352-354, Issue , 1996, Pages 379-382

  Ferraz, A C ^a   Claudino Da Silva, R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Density functional calculations; Gallium arsenide; Indium arsenide; Tellurium

Indexed keywords

ADSORPTION; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MATHEMATICAL MODELS; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE;

DENSITY FUNCTIONAL THEORY; INDIUM ARSENIDE; SEMICONDUCTING INDIUM ARSENIDE; SURFACE GEOMETRY;

SEMICONDUCTING TELLURIUM;

EID: 0030141425     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01164-1     Document Type: Article

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