Low temperature photo-oxidation of silicon using deep UV radiation

Electronics Letters

Volumn 32, Issue 22, 1996, Pages 2097-2098

  Zhang, Jun Ying ^a   Boyd, I W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Oxidation; Semiconductor devices; Silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDATION; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

DIRECT PHOTOOXIDATION;

SEMICONDUCTING SILICON;

EID: 0030262459     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961377     Document Type: Article

References (11)

1. NAGASAWA, H., KITAJIMA, H., KITAYAMA, D., OKAMOTO, Y., and IKOMA, H.: 'Magnetically excited plasma oxidation of Si', Jpn. J. Appl. Phys., 1995, 34, pp. L1103-L1106
2. TODOROV, S.S., and FOSSUM, E.R.: 'Oxidation of silicon by a low-energy ion beam: Experiment and model', Appl. Phys. Lett., 1988, 52, pp. 48-50
3. BOYD, I.W., and WILSON, J.I.B.: 'Laser-induced oxidation of silicon', Thin Solid Films, 1981, 83, pp. L173-L176
4. NAYAR, V., BOYD, I.W., GOODALL, F.N., and ARTHUR, G.: 'Low temperature oxidation of crystalline silicon using excimer laser irradiation', Appl. Surf. Sci., 1989, 36, pp. 134-140
5. BOYD, I.W., CRACIUN, V., and KAZOR, A.: 'Vacuum-ultra-violet and ozone induced oxidation of silicon and silicon-germanium', Jpn. J. Appl. Phys., 1993, 32, pp. 6141-6146
6. KOGELSCHATZ, U.: 'Silent-discharge driven excimer UV sources and their applications', Appl. Surf. Sci., 1992, 54, pp. 410-423
7. BERGONZO, P., and BOYD, I.W.: 'Low pressure photodeposition of silicon nitride films using a xenon excimer lamp', Appl. Phys. Lett., 1993, 63, pp. 1757-1759
8. BOYD, I.W., and WILSON, J.I.B.: 'A study of thin silicon dioxide films using infrared absorption techniques', J. Appl. Phys., 1982, 53, pp. 4166-4172
9. 2 interface', J. Appl. Phys., 1984, 56, pp. 2351-2355
10. NULMAN, J.: 'Rapid thermal processing with reactive gases'. Proc. NATO Advanced Study Institute, Boca Raton, June 1988
11. 5 films for storage dielectrics of 64-Mb DRAM's', IEEE Trans. Electron Devices, 1991, 38, pp. 455-462