Loss behaviors of Si substrate during growth of the SiC films prepared by hydrogen plasma sputtering

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 8 SUPPL. B, 1997, Pages

  Sun, Yong ^a   Miyasato, Tatsuro ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cubic SiC films; Hollow void; Hydrogen plasma; Si loss; Si substrate; Strain; Texture coefficient

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; FILM PREPARATION; HYDROGEN; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILICON CARBIDE; SPUTTERING; STRAIN; SUBSTRATES; SURFACE ROUGHNESS; TEXTURES;

HYDROGEN PLASMA SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0031211055     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1071     Document Type: Article

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