Transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1227-1231

  Kumakura, K ^a   Motohisa, J ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

SINGLE ELECTRON TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032118558     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00009-4     Document Type: Article

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