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Volumn 27, Issue 12A, 1988, Pages L2370-L2372

Nonexistence of long-range order in Ga0.5In0.5P epitaxial layers grown on (111)B and (110)Gaas infstrates

(9) Gomyo, Akiko a Suzuki, Tohru a Hotta, Hitoshi a Fujii, Hiroshi a Kawata, Seiji a Kobayashi, Kenichi a Ueno, Yoshiyasu a Hino, Isao a Iijima, Sumio a

a NEC CORPORATION (Japan)

Author keywords

Band gap energy; CuPt type superstructure; Gallium arsenide; Gallium indium phosphide; Long range order; MOVPE; Sublattice ordering; Substrate orientation; Superlattice

Indexed keywords

BORON; CRYSTALS--EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM INDIUM PHOSPHIDE; SUPERLATTICES; TRANSMISSION ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0024127211 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.27.L2370 Document Type: Article

Times cited : (50)

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