Ideal performance of cascade and noncascade intersubband and interband long-wavelength semiconductor lasers

Applied Physics Letters

Volumn 75, Issue 14, 1999, Pages 2020-2022

  Flatté, Michael E ^a   Olesberg, J T ^a   Grein, C H ^b  

^a UNIVERSITY OF IOWA   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ENERGY DISSIPATION; ENERGY GAP; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

ALUMINUM ARSENIC ANTIMONIDE; ALUMINUM GALLIUM ANTIMONIDE; GALLIUM INDIUM ANTIMONIDE; INDIUM ARSENIDE; INTERBAND TRANSITION; INTERSUBBAND TRANSITION;

SEMICONDUCTOR LASERS;

EID: 0032613467     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124902     Document Type: Article

References (21)

1. M. Tacke, Infrared Phys. Technol. 36, 447 (1995).
2. C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, Appl. Phys. Lett. 69, 2810 (1996).
3. G. Scamarcio, C. Gmachi, F. Capasso, A. Tredicucci, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, Semicond. Sci. Technol. 13, 1333 (1998).
4. D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y. H. Zhang, H. L. Dunlap, and L. West, Appl. Phys. Lett. 67, 3700 (1995); T. C. Hasenberg, R. H. Miles, A. R. Kost, and L. West, IEEE J. Quantum Electron. 33, 1403 (1997).
5. D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y. H. Zhang, H. L. Dunlap, and L. West, Appl. Phys. Lett. 67, 3700 (1995); T. C. Hasenberg, R. H. Miles, A. R. Kost, and L. West, IEEE J. Quantum Electron. 33, 1403 (1997).
6. J. I. Malin, J. R. Meyer, C. L. Felix, J. R. Lindle, L. Goldberg, C. A. Hoffman, and F. J. Bartoli, Appl. Phys. Lett. 68, 2976 (1996).
7. M. E. Flatté, T. C. Hasenberg, J. T. Olesberg, S. A. Anson, T. F. Boggess, C. Yan, and D. L. McDaniel, Jr., Appl. Phys. Lett. 71, 3764 (1997).
8. J. T. Olesberg, M. E. Flatté, C. H. Grein, T. C. Hasenberg, S. A. Anson, and T. F. Boggess, Appl. Phys. Lett. 74, 188 (1999).
9. See, e.g., L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995).
10. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, IEEE Photonics Technol. Lett. 9, 170 (1996).
11. R. Q. Yang and S. S. Pei, J. Appl. Phys. 79, 8197 (1996).
12. J. T. Olesberg, M. E. Flatté, T. C. Hasenberg, and C. H. Grein (unpublished).
13. J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 72, 680 (1998).
14. See, e.g., J. T. Verdeyen, Laser Electronics, 3rd ed. (Prentice-Hall, Englewood Cliffs, NJ, 1995).
15. R. Winkler and U. Rössler, Phys. Rev. B 48, 8918 (1993).
16. Parameters for the systems considered come from Landolt-Börnstein: Physics of Group IV Elements and III-V Compounds, edited by O. Madelung (Springer, New York, 1982), Vol. III, p. 17a, and Landolt-Börnstein: Intrinsic Properties of Group IV Elements and III-V, II-VI, and I-VII Compounds, edited by O. Madelung (Springer, New York, 1987), Vol. III, p. 22a.
17. Parameters for the systems considered come from Landolt-Börnstein: Physics of Group IV Elements and III-V Compounds, edited by O. Madelung (Springer, New York, 1982), Vol. III, p. 17a, and Landolt-Börnstein: Intrinsic Properties of Group IV Elements and III-V, II-VI, and I-VII Compounds, edited by O. Madelung (Springer, New York, 1987), Vol. III, p. 22a.
18. J. T. Olesberg, S. A. Anson, S. W. McCahon, M. E. Flatté, T. F. Boggess, D. H. Chow, and T. C. Hasenberg, Appl. Phys. Lett. 72, 229 (1998).
19. M. E. Flatté, C. H. Grein, T. C. Hasenberg, S. A. Anson, D.-J. Jang, J. T. Olesberg, and T. F. Boggess, Phys. Rev. B 59, 5745 (1999);
20. D.-J. Jang, M. E. Flatté, C. H. Grein, J. T. Olesberg, T. C. Hasenberg, and T. F. Boggess, Phys. Rev. B 58, 13047 (1998).
21. P. Hyldgaard and J. W. Wilkins, Phys. Rev. B 53, 6889 (1997).