The preparation of high quality oriented diamond thin films via low temperature and hydrogen ion etched nucleation

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 262-266

  Gu, Changzhi ^a   Jiang, X ^a   Jin, Zengsun ^b  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

^b JILIN UNIVERSITY   (China)

Author keywords

Diamond; Hydrogen ion etching; Orientation; Thermal conductivity

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; ELECTRIC POTENTIAL; ETCHING; HYDROGEN; MORPHOLOGY; NUCLEATION; SILICON WAFERS; TEXTURES; THERMAL CONDUCTIVITY OF SOLIDS; THIN FILMS; TWINNING;

BIAS-ENHANCED NUCLEATION; HYDROGEN ION ETCHING;

DIAMOND FILMS;

EID: 0032608306     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00360-4     Document Type: Article

References (8)

1. Jiang X., Klages C.-P. Diamond Relat. Mater. 2:1993;1112.
2. Stoner B., Glass J.T. Appl. Phys. Lett. 60:1992;698.
3. Komatsu S., Okada K., Chou S.B., Aizawa T., Shigetani H., Tanaka J., Sato Y. J. Vac. Sci. Technol. A16:1998;749.
4. Zhang W.J., Jiang X., Xia Y.B. J. Appl. Phys. 82:1997;1896.
5. Gu C., Jin Z., Lu X., Zou G., Zhang J., Fang R. Thin Solid Films. 311:1997;124.
6. Tamor M.A., Everson M.P. J. Mater. Res. 9:1994;1839.
7. C. Wild, N. Herres, R. Locher, W. Müller, P. Koild, Proc. 4th Int. Conf. on New Diamond Science and Technology, Tokyo, 1994, MYU, p. 149.
8. Jiang X., Zhang W.J., Klages C.-P. Phys. Rev. B 58:1998;7064.