Characterization of silicon LEDs integrated with oxidized porous silicon SOI

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 115-118

  Balucani, M ^a   Bondarenko, V ^b   Dorofeev, A ^b   Ermalitski, F ^b   Kazuchits, N ^b   Maiello, G ^a   Masini, L ^a   Melnikov, S ^b   La Monica, S ^a   Volchek, S ^b   Ferrari, A ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTROLUMINESCENCE; INFRARED RADIATION; LIGHT EMISSION; POROUS SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; QUANTUM EFFICIENCY;

LATERAL PN JUNCTIONS; OXIDIZED POROUS SILICON;

LIGHT EMITTING DIODES;

EID: 0031150229     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00028-2     Document Type: Article

References (7)

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