Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Applied Physics Letters

Volumn 74, Issue 13, 1999, Pages 1851-1853

  Huang, Y S ^a,e   Sun, W D ^a   Malikova, L ^a   Pollak, Fred H ^a   Ferguson, I ^b   Hou, H ^b   Feng, Z C ^c   Ryan, T ^d   Fantner, E B ^d,f  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b EMCORE CORPORATION   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d Malvern Instruments Inc   (United States)

^e NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^f DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

CONTACTLESS ELECTROREFLECTANCE; GALLIUM ALUMINUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032607990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123690     Document Type: Article

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