MOCVD growth of high power 0.5 W 35 GHz MMICs

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 648-654

  Ferguson, I T ^a   Beckman, C ^a   Feng, Z C ^a   Thompson, A G ^a   Stall, R ^a   Hou, H Q ^a   Seipel, K ^b,c   Chen, S W ^b   Aina, L ^b,d  

^a EMCORE CORPORATION   (United States)

^b MA COM Inc   (United States)

^c University Research Foundation   (United States)

^d Epitaxial Technology LLC   (United States)

Author keywords

MBE wafers; MMIC; MOCVD p HEMT wafers

Indexed keywords

COST EFFECTIVENESS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MILLIMETER WAVE DEVICES; MOLECULAR BEAM EPITAXY; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

MOLECULAR BEAM EPITAXY WAFERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0032477098     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00571-5     Document Type: Article

References (4)

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3. C. Beckham, R.A. Stall, A.G. Thompson, L. Aina, K. Seipel, Proc. GaAs MANTECH Conf., 1996, pp. 174-176.
4. A. Thompson, R.A. Stall, W. Kroll, E. Armour, C. Beckham, P. Zawadzki, L. Aina, K. Siepel, J. Crystal Growth 170 (1997) 92.