Pseudomorphic high-electron-mobility transistors with low-temperature-grown GaAs buffers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2236-2239

  Rogers, T J ^a   Nichols, K B ^b   Kopp, W F ^a   Smith, F W ^a   Actis, R ^b  

^a Lockheed Martin Company   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345503493     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588908     Document Type: Article

References (8)

1. F. W. Smith, Mater. Res. Soc. Symp. Proc. 241, 3 (1992).
2. R. Actis, K. B. Nichols, W. F. Kopp, T. J. Rogers, and F. W. Smith, 1995 IEEE/MTT-S International Microwave Symposium Digest, Orlando, FL, 1995 (unpublished), p. 445.
3. C.-L. Chen, F. W. Smith, A. R. Calawa, L. J. Mahoney, and M. Manfra, IEEE Trans. Electron Devices 36, 1546 (1989).
4. F. W. Smith, A. R. Calawa, C.-L. Chen, M. J. Manfra, and L. J. Mahoney, IEEE Electron Device Lett. 9, 77 (1988).
5. W. A. Beck and J. R. Anderson, J. Appl. Phys. 62, 541 (1987).
6. K. B. Nichols, T. J. Rogers, W. F. Kopp, F. W. Smith, and R. Actis, 1995 Electronic Materials Conference, June 21-23, 1995, Charlottesville, Virginia (unpublished).
7. A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, M. R. Melloch, and N. Otsuka, Appl. Phys. Lett. 57, 1331 (1990).
8. M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B-Y. Tsaur, and A. R. Calawa, Appl. Phys. Lett. 54, 1881 (1989).