High-resolution X-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7664-7670

  Gray, A L ^a   Newell, T C ^a   Lester, L F ^a   Lee, H ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

STRAINED QUATERNARY QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 0032607770     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370569     Document Type: Article

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