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Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 587-590

Structural properties of homoepitaxial and heteroepitaxial ZnSe-based laser structures

(5) Heinke, H a Behringer, M a Wenisch, H a Grossmann V a Hommel, D a

a UNIVERSITY OF BREMEN (Germany)

Author keywords

High resolution X ray diffraction; Homoepitaxy; Laser diode; ZnSe

Indexed keywords

EID: 0342563051 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/s0022-0248(98)80123-1 Document Type: Article

Times cited : (5)

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