Formation of zinc blende GaN using the conversion technique

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 536-539

  Sukegawa, T ^a   Katsuno, H ^a   Kawaguchi, S ^a   Kimura, M ^a   Tanaka, A ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Conversion technique; GaN; Photoluminescence; Wurtzite structure; Zinc blende structure

Indexed keywords

ANNEALING; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; X RAY CRYSTALLOGRAPHY;

CONVERSION TECHNIQUE; ZINC BLENDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031548543     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80138-9     Document Type: Article

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