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Volumn 174, Issue 1-4, 1997, Pages 647-652

Structural properties of GaN grown by MOVPE turbodisc mass-production reactor

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; MATHEMATICAL TECHNIQUES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

EID: 0031547385     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00068-7     Document Type: Article
Times cited : (7)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.