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Volumn 174, Issue 1-4, 1997, Pages 647-652
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Structural properties of GaN grown by MOVPE turbodisc mass-production reactor
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL REACTORS;
CRYSTAL STRUCTURE;
DISLOCATIONS (CRYSTALS);
FILM GROWTH;
MATHEMATICAL TECHNIQUES;
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY CRYSTALLOGRAPHY;
TURBODISC MASS PRODUCTION REACTOR;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0031547385
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(97)00068-7 Document Type: Article |
Times cited : (7)
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References (10)
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