Selective nucleation-based epitaxy (SENTAXY): A novel approach for thin film formation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1383-1388

  Kumomi, Hideya ^a   Yonehara, Takao ^a  

^a CANON INC   (Japan)

Author keywords

Polycrystal; Selective growth; Selective nucleation; Si; Thin film

Indexed keywords

EID: 0006184581     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1383     Document Type: Article

References (27)

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