Improvement on P-channel SOI LDMOS transistor by adapting a new tapered oxide technique

IEEE Transactions on Electron Devices

Volumn 46, Issue 9, 1999, Pages 1890-1894

  Kim, Jongdac ^a,b   Kim, Sang Gi ^b   Song, Q Sang ^b,c   Lee, Sang Yong ^a,d   Koo, Jin Gun ^a,b   Ma, Dong Sung ^a,b  

^a IEEE

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Analogchips Inc   (South Korea)

^d Woosong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; OXIDATION; OXIDES; SILICON ON INSULATOR TECHNOLOGY;

LATERAL DOUBLE-DIFFUSE METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTORS;

MOSFET DEVICES;

EID: 0032595349     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.784190     Document Type: Article

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