Novel p-channel SOI LDMOS transistor with tapered field oxides

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 375-378

  Kim, Jongdae ^a   Kim, Sang Gi ^a   Roh, Tae Moon ^a   Koo, Jin Gun ^a   Nam, Kee Soo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

LATERAL DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR (LDMOS) TRANSISTORS;

MOSFET DEVICES;

EID: 0031622344     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)