Boron out diffusion from Si substrates in various ambients

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1095-1097

  Suzuki, Kunihiro ^a   Yamawaki, Hideki ^a   Tada, Yoko ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFERENTIAL EQUATIONS; HELIUM; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; TRANSPORT PROPERTIES;

AMBIENT CONDITIONS; TRANSPORT COEFFICIENTS;

DIFFUSION IN SOLIDS;

EID: 0031212177     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(97)00039-7     Document Type: Article

References (4)

1. Sun, J. Y.-C., Wong, C., Taur, Y. and Hsu, C.-H., VLSI Tech. Dig., 1989, 17.
2. Pfiester, J. R., Baker, F. K., Mele, T. C., Tseng, H.-H., Tobin, P. J., Hayden, J. D., Miller J. W., Gunderson, C. D. and Parrillo, L. C., IEEE Trans. Electron Dev., 1990, ED-37, 1841.
3. Grove, A. S., Physics and Technology of Semiconductor Devices, Wiley, New York, 1967, p. 67.
4. Sze, S. M., VLSI Technol., McGraw-Hill, 1983, p. 67.