Novel high-frequency high-voltage LDMOS transistor using an extended gate resurf technology

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 45-48

  Vestling, L ^a   Edholm, B ^a   Olsson, J ^a   Tiensuu, S ^a   Soderbarg, A ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

EXTENDED GATE RESURF TECHNOLOGY; LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTORS (LDMOS);

MOSFET DEVICES;

EID: 0030674615     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)