Electrical and physical characterization of tetraethylorthosilicate-O3 borophosphosilicate glass

Journal of the Electrochemical Society

Volumn 143, Issue 10, 1996, Pages 3366-3371

  Iyer, R ^a   Thakur, R P S ^a   Rhodes, H ^a   Liao, R ^b   Rosler, R ^b   Yieh, E ^b  

^a MICRON TECHNOLOGY INC   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOROPHOSPHATE GLASS; CHARACTERIZATION; CHARGED PARTICLES; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; INTERFACES (MATERIALS); PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; THICK FILMS; VOLTAGE MEASUREMENT;

BOROPHOSPHOSILICATE GLASS; FLATBAND SHIFT; TETRAETHYLORTHOSILICATE;

BOROSILICATE GLASS;

EID: 0030259702     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837213     Document Type: Article

References (6)

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