Process characteristics for subatmospheric chemical vapor deposited borophosphosilicate glass and effect of carrier gas

Journal of the Electrochemical Society

Volumn 144, Issue 9, 1997, Pages 3208-3212

  Xia, L Q ^a   Yieh, E ^a   Gee, P ^a   Campana, F ^a   Nguyen, B C ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; GASES; HELIUM; PRESSURE EFFECTS; SILICON WAFERS; SUBSTRATES; THIN FILMS;

BOROPHOSPHOSILICATE GLASS; CARRIER GAS; SUBATMOSPHERIC CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING GLASS;

EID: 0031237027     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837985     Document Type: Article

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