Characterization of surface defects in the sub atmospheric pressure-CVD borophosphosilicate glass film on silicon wafer

International Symposium on IC Technology, Systems and Applications

Volumn 7, Issue , 1997, Pages 601-604

  Tang, S K ^a   Mridha, S ^a   Vassiliev, V Y ^b   Zheng, J Z ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; OPTICAL MICROSCOPY; ORGANOMETALLICS; OZONE; PHOSPHORUS; SILICON WAFERS;

BOROPHOSPHOSILICATE GLASS FILMS; DOPANTS; SUBATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; SURFACE DEFECTS;

GLASS;

EID: 1842779828     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. W. Kern, G. L. Schnable, Chemically Vapor-Deposited Borophosphosilicate Glasses for Silicon Device Applications, RCA Review, 43(3), 1982, p. 4232
2. V. Y. Vassiliev and T. G. Duhanova, The Optimized BPSG Dopant Concentration Level, Electronic Industry (USSR), 3, 1989, p. 31
3. G. L. Schnable, A. W. Fisher, J. M. Shaw, Devitrification in Borophosphosilicate Glass Films Used in VLSI, J. Electrochem. Soc., 137(12), 1990, p. 3973
4. K. Ahmed, C. Geisert, Borophosphosilicate glass crystal induction and suppression, J. Vac. Sci. Technol. A, 10(2), 1992, p. 313
5. M. Yoshimaru, H. Wakamatsu, Microcrystal Growth on Borophosphosilicate Glass Film during High-Temperature Annealing, J. Electrochem. Soc., 143(2), 1996, p. 666
6. V. Y. Vassiliev, J. Z. Zheng, The Investigation on the Deposition Kinetics of Sub-atmospheric Pressure Glass Film, (in this conference proceedings.)