Imprint in ferroelectric SrBi2Ta2O9 capacitors for non-volatile memory applications

Integrated Ferroelectrics

Volumn 22, Issue 1-4, 1998, Pages 95-107

  Grossmann, M ^a   Lohse, O ^a   Bolten, D ^a   Waser, R ^a   Hartner, W ^b   Schindler, G ^b   Dehm, C ^b   Nagel, N ^b   Joshi, V ^c   Solayappan, N ^c   Derbenwick, G ^c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b SIEMENS AG   (Germany)

^c Symetrix Corporation   (United States)

Author keywords

Ferroelectric thin films; Imprint; SBT; SrBi2Ta2O9

Indexed keywords

CAPACITORS; DEGRADATION; EXTRAPOLATION; FERROELECTRIC MATERIALS; ORGANOMETALLICS; STRONTIUM COMPOUNDS; THERMAL EFFECTS; THIN FILM DEVICES;

IMPRINTS; METAL-ORGANIC DEGRADATION (MOD); STRONTIUM BISMUTH TANTALATE;

DIELECTRIC FILMS;

EID: 0032307983     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808208033     Document Type: Article

References (11)

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