Proton irradiation induced defectS in 611- And 411-SiC

Materials Research Society Symposium - Proceedings

Volumn 540, Issue , 1999, Pages 177-182

  Puff, Werner ^a   Balogh, Adam G ^a   Mascher, Peter ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON IRRADIATION; SILICON CARBIDE; SINGLE CRYSTALS; SPECTROSCOPY;

POSITRON LIFETIME SPECTROSCOPY; RADIATION INDUCED DEFECTS;

PROTON IRRADIATION;

EID: 0032592092     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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