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Volumn 442, Issue , 1997, Pages 625-629
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Vacancies in electron irradiated 6H-SiC
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CARBON;
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
ELECTRON SPIN RESONANCE SPECTROSCOPY;
ELECTRONS;
SEMICONDUCTING DIAMONDS;
SEMICONDUCTING SILICON;
THERMODYNAMIC STABILITY;
DOPPLER BROADENING;
ELECTRON IRRADIATION;
POSITRON LIFETIME SPECTROSCOPY;
SILICON CARBIDE;
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EID: 0030687358
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (7)
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