On the temperature sensitivity of strained multiple quantum well, long wavelength semiconductor lasers: Root cause analysis and the effects of varying device structure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 218-234

  Evans, John D ^a   Simmons, John G ^b   Makino, Toshi ^a  

^a NORTEL NETWORKS   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

InGaAsP; Long wavelength; Quantum well lasers; Temperature sensitivity

Indexed keywords

ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION; ELECTRIC CURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; THERMAL EFFECTS;

ABSORPTION LOSSES; AUGER RECOMBINATION (AR); CARRIER LEAKAGE; DEVICE STRUCTURES; INGAASP; LONG WAVELENGTH; MATERIAL PARAMETERS; MODAL GAIN; MULTIPLE QUANTUM WELL (MQM); ROOT CAUSE ANALYSIS (RCA); TEMPERATURE DEPENDENCES; TEMPERATURE SENSITIVITY; THRESHOLD CURRENTS; MULTIPLE QUANTUM WELLS;

QUANTUM WELL LASERS; SEMICONDUCTOR LASERS;

EID: 0031377736     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273790     Document Type: Conference Paper

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