Optical properties of an In0.5Ga0.5As nanostructure spontaneously formed on GaAs (311)A-oriented substrates

Journal of Physics D: Applied Physics

Volumn 29, Issue 9, 1996, Pages 2221-2228

  Vaccaro, Pablo O ^a   Hirai, Manabu ^a   Fujita, Kazuhisa ^a   Watanabe, Toshihide ^a  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

RADIATIVE RECOMBINATION TIME CONSTANT;

NANOSTRUCTURED MATERIALS;

EID: 0030244742     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/9/001     Document Type: Article

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