Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2108-2109

  Sandhu, Adarsh ^a   Missous, Mohamed ^b  

^a TOKAI UNIVERSITY   (Japan)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

CBE; GaP; InP; MBE; MOCVD; Phosphorous

Indexed keywords

ELECTRIC PROPERTIES; EXCITONS; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOSPHORUS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

BACKGROUND IMPURITY CONCENTRATION; EPILAYERS; FOURIER TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY; QUADRUPOLE MASS SPECTROSCOPY; SEMICONDUCTING GALLIUM PHOSPHIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030121597     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2108     Document Type: Article

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