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Volumn 186, Issue 4, 1998, Pages 475-479

Electrical and optical properties of InP grown at different cracking temperature and V/III ratio using a valve phosphorous cracker cell

(4) Yoon, S F a Zheng, H Q a Zhang, P H a Mah, K W a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRACKS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

CRACKER CELL; CRACKING ZONE TEMPERATURE; ELECTRON MOBILITY; FULL WIDTH AT HALF MAXIMUM;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032046044 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00829-4 Document Type: Article

Times cited : (7)

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