AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

Microelectronics Journal

Volumn 27, Issue 4-5, 1996, Pages 411-421

  Watanabe, Toshihide ^a   Yamamoto, Teiji ^a   Vaccaro, Pablo O ^a   Ohnishi, Hajime ^a   Fujita, Kazuhisa ^a  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THICKNESS CONTROL;

MISORIENTATION ANGLES; PEAK ENERGY; PHOTOLUMINESCENCE SPECTRA; RED SHIFT; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030194175     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00065-8     Document Type: Article

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