Very high compositional homogeneity of 1.55 μm strain-compensated InGaAsP MQW structures by MOVPE under N2 atmosphere

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 637-643

  Jochum, S ^a   Kuphal, E ^a   Piataev, V ^a   Burkhard, H ^a  

^a DEUTSCHE TELEKOM LABORATORIES   (Germany)

Author keywords

DFB laser; Homogeneity; InGaAsP; MOVPE

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INDIUM GALLIUM ARSENIDE PHOSPHIDE; LATTICE MISMATCH; LOW-PRESSURE METALLORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 0032477159     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00663-0     Document Type: Article

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